Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity
نویسندگان
چکیده
Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f0, of 3.2 THz (93 lm) was obtained by using n-type GaAs emitter doped to 1 · 10 cm 3 and Al0.04Ga0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10–93 lm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are 19% and 5.5 · 10 Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K. 2006 Elsevier B.V. All rights reserved. PACS: 85.60.Gz; 78.66.Fd; 78.67.Pt
منابع مشابه
n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency.
Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 microm or approximately 13 meV work function) is demonstrated by using a 1 x 10(18) cm(-3) Si-doped GaAs emitter and an undoped Al(0.04)Ga(0.96)As barrier structure. The peak responsivity of 6.5 A/W, detectivity of 5.5 x 10...
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